ETX500T ETX1000T

Large-area InGaAs Photodiodes 
ETX 500 and ETX 1000 Series
Key Features • High responsivity in near infrared spectrum
• Low dark current for high accuracy
• High shunt resistance
• Linear over wide range of input optical power
• Active diameters of 0.5 and 1 mm
The JDSU ETX 500T and ETX 1000T series large-area InGaAs PIN
photodetectors have photosensitive areas with diameters of 500 and 1000 µm,
respectively. These photodiodes offer high responsivity in the 800 – 1700 nm
spectrum, and are designed for use in instrumentation, sensing, and rangefinding applications.
The detectors feature high sensitivity and linear spectral responsivity over a broad
range of input powers. When operating in photovoltaic mode, a noise current
density of 10 fA/Hz
1/2
is typical at room temperature. When reverse-biased for
greater bandwidth, a noise floor of 60fA/Hz
1/2
at -5 V is typical. Linear spectral
response results from the low series resistance of the photodiodes.
The ETX 500T and ETX 1000T series are optimal for the high-speed, differential
mode measurements common in precision optical power meters, optical fiber
identifiers, and optical loss test sets.
The ETX 500T and ETX1000T photodiodes are packaged in hermetically-sealed
TO cans.
Applications
• Optical power meters
• Optical fiber identifiers
• Optical attenuation test sets
• Near infrared spectroscopy
• Infrared range finders
Dimensions Diagram: ETX 500T, ETX 1000T
Specifications
3
LARGE AREA INGAAS PHOTODIODES
Parameter ETX 500T ETX 1000T
Electrical and Optical Specifications
Conditions 25 °C, VR= 5 V 25 °C, VR= 5 V
Active diameter Typical 0.5 mm 1.0 mm
Responsivity at 850 nm Minimum 0.10 A/W 0.10 A/W
Typical 0.20 A/W 0.20 A/W
Responsivity at 1300 nm Minimum 0.80 A/W  0.80 A/W
Typical 0.90 A/W 0.90 A/W
Responsivity at 1500 nm Typical 0.95 A/W 0.95 A/W
Dark current Typical 12 nA  50 nA
Maximum 100 nA 400 nA
Shunt resistance
1 Minimum 5.0 MΩ 2.0 MΩ
Typical 250 MΩ 50 MΩ
Linearity
2
Typical ±0.15 dB ±0.15 dB
Total capacitance
3
Typical  35 pF  100 pF
Maximum 50 pF 150 pF
Bandwidth
4
Typical 140 MHz 35 MHz
Maximum Ratings
Reverse voltage Typical 20 V 20 V
Reverse current
5
Typical 10 mA 10 mA
Forward current
6
Typical 10 mA 10 mA
Power dissipation Typical 100 mW 100 mW
Operating temperature -40 to 85°C  -40 to 85°C
Storage temperature -40 to 85°C  -40 to 85°C
1. VR = 10 mV
2. For ETX 500T and ETX 1000T, to 9 dBm
3. For ETX 500T and ETX 1000T, VR = 0 V
4. -3 dB point into a 50 Ωload
5. Under reverse bias, current at which device may be damaged
6. Under forward bias, current at which device may be damaged